Solid state band essex

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Journal of Physics C: Solid State Physics to study the excitations of wide-band ferromagnetic semiconductors described by the s-f (or s-d) interaction model. Welcome. SolidState are an experienced function band based in the Tunbridge Wells area of Kent. With a repertoire that covers hit songs across most genres. Solid State Power Amplifiers (SSPAs) have been dramatically evolving over the achieved at S-Band, 4 kW at C-Band, 1 kW at X-Band and Ku Band and 50 W at Ka . Witham, Essex, CM8 3HA United Kingdom. Tel: 1 ().

Solid State Communications, Vol. 5, PP. , Harlow, Essex. (​Received 17 andfor the mobility in the [] conduction band minima are ± 0. We have a range of high power solid state lasers as well as tunable and fixed Laser); Hot Electron transport devices in wide band gap materials (GaN/GaInN). Journal of Physics C: Solid State Physics to study the excitations of wide-band ferromagnetic semiconductors described by the s-f (or s-d) interaction model.

Hall, T. P. P. (Univ. of Essex, Eng.); Bessent, R. G. Solid State Commun.; 9: No. Observations of the temperature dependence and shape of the F* band in pure. Outdoor (H) series of Solid State Power Amplifiers is packaged with the latest Witham, Essex CM8 3HA United Kingdom. Tel: () . Note 2: All Ku-Band SSPAs are fitted with a receive band reject bulkhead filter, standard. An optional​. Power Outdoor (H) series of Solid State Power Amplifi- for the best wide band intermod performance and line- Witham, Essex CM8 3HA United Kingdom.






This site uses cookies. By band ztate browse the site you are consenting to their use. Please visit our cookie policy to find out which cookies we band and why. View cookie policy. PhD University of Wales, Adams, M. Model for confined Tamm plasmon devices.

Journal of the Optical Society of America B. Adams, MJ. High-frequency dynamics solid evanescently-coupled nanowire lasers. Scientific Reports. Vaughan, M. Silid, E. Confined Tamm band states coupled to quantum dots in a photoconductive detector. Applied Physics Letters. Cemlyn, BR. Locking bandwidth of two laterally coupled semiconductor essex subject to optical injection. Solix, N. Nonlinear dynamics of solitary and optically injected two-element laser arrays with four different waveguide structures: A numerical study.

Optics Express. Semiconductor Science and Technology. Cemlyn, B. Near-threshold high spin amplification in a state GaInNAs spin laser. Modulation properties of solitary and optically injected essex semiconductor lasers.

Photonics Research. Torre, MS. High frequency continuous essex oscillations in spin-polarized vertical-cavity surface-emitting lasers. Optics Letters. Effects of detuning, gain-guiding, and index antiguiding on the rssex of two laterally coupled semiconductor lasers.

Physical Review A. Stability and bifurcation band of spin-polarized vertical-cavity surface-emitting lasers. Al-Seyab, RK. Dynamics and polarization of conventional and spin-VCSELs in the presence of stahe axial magnetic field. Susanto, H. Spin-flip model of spin-polarized vertical-cavity surface-emitting band Asymptotic analysis, numerics, and experiments. Alharthi, Esses. Salvide, MF. Hurtado, A. Circular polarization switching sokid bistability solid an optically injected nm spin-vertical cavity babd emitting laser.

Lisesivdin, SB. Optical gain in 1. Nanoscale Research Letters. Simulated dynamics state optically pumped dilute nitride nm state vertical-cavity surface-emitting lasers.

IET Optoelectronics. Dogru, N. Numerical simulation of a mode-locked quantum dot external cavity laser. Journal of Essex Technology. Control of emitted light polarization in a nm dilute nitride spin-vertical cavity solid emitting laser state to circularly polarized optical injection.

Lisesivdin, S. Khan, NA. Al-Seyab, R. Dual-mode lasing in a nm quantum dot distributed band laser induced by single-beam optical injection. Schires, K. Mazzucato, S. Optics Communications. Investigation of vertical cavity surface band laser dynamics for neuromorphic photonic systems. Dynamic Transitions in a Photonic Integrated Circuit. Electronics Letters. Calvez, S. State lasers: the first fifty years. Quirce, A. Toomey, JP. Alexandropoulos, D. Bistability patterns essex nonlinear switching with very high contrast ratio in a nm quantum dash semiconductor laser.

Comprehensive experimental analysis of nonlinear dynamics in an optically-injected semiconductor laser. AIP State. Henning, ID. Gauss, V. Torre, M. Nonlinear semiconductor lasers and amplifiers for all-optical information processing. Essex, C. Labukhin, D. Al-Hosiny, NM.

Distributed feedback DFB laser under solid optical injection. Vaughan, MP. Mutual optical injection in coupled DBR laser pairs. Power and wavelength polarization bistability solid very wide hysteresis cycles in a nm-VCSEL subject to orthogonal optical stae. Stolz, CA. Band fluctuations of a weakly optically-injected semiconductor laser in a period-one state. Widely tunable optoelectronic source of continuous-wave terahertz radiation.

Dyson, Eolid. Comparison of ztate I and solid II heterojunction unitravelling state photodiodes for terahertz generation. Li, X. Gain recovery in semiconductor optical amplifiers. Vasileiadis, M. Two-wavelength switching with 1. Tailoring enhanced chaos in optically injected semiconductor lasers.

Bistability and solid gain in 1. Homayounfar, A. Locking bandwidth and birefringence effects for polarized xtate injection in vertical-cavity surface-emitting lasers. Effects of parallel and orthogonal polarization on nonlinear optical characteristics solid a nm VCSOA. Two-wavelength switching with nm essex laser amplifiers. Journal of Optical Networking. Giller, R. Analysis of the dimensional dependence of semiconductor optical amplifier recovery speeds. Al-Hosiny, N.

Secondary locking regions in laser diode subject to optical injection from two lasers. Chlouverakis, KE. Antimonotonicity and maximal complexity essex optically injected two-section lasers.

Rate equations and transient phenomena in semiconductor lasers. Radiative and Auger processes in semiconductors. Journal of Luminescence. Theoretical considerations of time delays in semiconductor lasers. Time delays and Q switching in homostructure and heterostructure injection lasers. Heterostructure injection lasers.

Wave-guiding properties of stripe-geometry double heterostructure injection lasers. Morgan, DJ. Quantum noise in semiconductor lasers.

Physica Status Solidi a. Optical properties of laser-type gallium arsenide. Physics Letters A. Electromagnetic theory of heterostructure injection lasers. On the polarisation of radiation from double-heterostructure injection lasers. A theory of oscillations in the output of GaAs junction lasers.

Theoretical effects of exponential band tails on the properties of the injection laser. A simple approximation for high-temperature properties of the injection laser. Journal of Physics D: Applied Physics. Springer Berlin Heidelberg. Injection locking of two laterally-coupled semiconductor laser arrays.

Sun, Y. RIN of mode-locked quantum dot external cavity laser. Salvide, M. Control of the emitted polarization in a nm spin-vcsel subject to circularly polarized optical injection. Polarization switching and bistability in a nm spin-VCSEL subject to circularly polarized optical injection.

Simultaneous generation of tuneable microwave and millimeter-wave signals with a nm QD DFB laser. Control of the emitted polarization in a nm spin-VCSEL subject to circularly polarized optical injection. Mode-locked quantum-dot hybrid soliton pulse source. Tunable microwave signal generation with an optically-injected nm quantum dot distributed-feedback laser. Tunable microwave, millimeter-wave and THz signal generation with a nm quantum dot laser.

Analysis and applications of an optically-injected nm Quantum-Dot Distributed Feedback laser. VCSELs for neuronal dynamics emulation. Bistability and switching with very high contrast ratio in an optically-injected nm-QDash Fabry-Perot laser. Khan, N. Polarized optical injection in long-wavelength vertical-cavity surface emitting lasers. Dynamical transitions in a coupled integrated device.

Analysis and characterisation of experimental real-time series of a semiconductor laser under optical injection. Transverse mode selection and injection locking in nm multimode VCSELs induced by optical injection. Polarisation-resolved real-time series of the dynamics of a nm-VCSEL under orthogonal optical injection. Al Seyab, R. Spatio-temporal dynamics of a multi-section tunable laser with and without optical injection. Nonlinear spatio-temporal dynamics of optically-injected three-section tunable DBR lasers.

All-optical inverter with a vertical-cavity semiconductor optical amplifier. Polarization bistability in long-wavelength multitransverse-mode VCSELs induced by orthogonal optical injection.

Popp, JD. Different forms of Polarization Bistability with very wide hysteresis cycles in a nm-VCSEL subject to orthogonal optical injection. Dynamics of optically-injected distributed feedback lasers using the travelling-wave approach. Nonlinear polarization dynamics induced by orthogonal optical injection in nm-Vertical-Cavity Surface-Emitting Lasers. Differences in the injection locking bandwidth in nm-VCSELs subject to parallel and orthogonal optical injection.

Locking bandwidth of optically injected Fabry—Perot semiconductor lasers for high injection strengths. Analysis of nonlinear dynamics and spin-flip parameters on elliptically polarized injection-locked VCSELs. Wavelength polarization switching and bistability in a nm-VCSEL subject to orthogonal optical injection. Differences in the injection locking bandwidth in a nm-VCSEL subject to distinct polarized optical injection. Effect of polarized optical injection on the wavelength polarization switching and bistability of a nm-VCSEL.

Razeghi, M. Modelling of real space transfer optical emitters. Spontaneous emission in microcavities. Reflective optical bistability and nonlinear switching in a nm vertical-cavity semiconductor optical amplifier VCSOA. Gain compression and recovery in semiconductor optical amplifiers. Investigation of photodetector structures for THz emission by photomixing using numerical simulation. Looking back and seeing the future: 35 years of optoelectronics. Photomixer for portable THz applications.

Polarisation effects on the nonlinear optical characteristics of a 1. Terahertz generation using unitravelling carrier photodiodes with type-II heterojunctions. Polarization sensitivity of injection-locked vcsels. Electron density dynamics, frequency shift and secondary locking region in an optically injected DFB laser. Wavelength dependence of gain recovery time in semiconductor optical amplifiers.

Optically injected semiconductor lasers for network transmission and switching. Zakhleniuk, NA. Analytical theory and numerical simulation of nonequilibrium transport effects in laser heterostructures. Effect of absorber length on hybrid mode-locking of a novel semiconductor laser. Macroscopic theory and numerical modelling of carrier transport and leakage effects in semiconductor laser heterostructures.

Said, SSS. A new model for multi-section tuneable lasers. Potter, RJ. Comparison of theoretical models for interband transitions in dilute nitrides and experimental measurement. Temperature dependence of the spontaneous emission factor in microcavities. Microcavity effects on spontaneous emission factor in 1. Optical characterization of GaInNAs. Gain-switched laser pulse propagation in a semiconductor optical amplifier.

Alexandropoulos, DA. Photoluminescence in Ga 0. Balkan, N. VCSEL structure hot electron light emitter. Snakes, TOADs, and butterflies: optical nonlinearities in semiconductor laser devices. Effect of amplified spontaneous emission on wavelength conversion by cross gain modulation in a semiconductor optical amplifier. Novel approach to the spontaneous emission factor. Greally, MJG. Operation of a novel hot-electron vertical-cavity surface-emitting laser.

O'Brien, A. Large-signal analysis of self-pulsating laser diodes. Snow, PA. Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide. Effect of quantum well number on nonlinear refraction in semiconductor laser amplifiers biased at transparency. Y-branch wavelength-controlled space switch using a twin-guide laser amplifier. Semiconductor nonlinear directional coupler with gain.

Integrated optically triggered polarisation-switching in InGaAsP twin-stripe injection lasers. Twin-stripe laser amplifier switch. Ritchie, S. Osinki, M. Computer-simulated Transient Evolution of 1. General - enquiries essex. Welcome to Essex Before you arrive Information for families International students. I'm looking for Select Level Undergraduate Postgraduate. Unable to find any suggestions for your query Prefer to see our subject areas?

Browse courses by subject. Looking for funded postgraduate opportunities? View doctoral training partnerships Browse postgraduate research opportunities. We are different and we are the same. Read our stories. Looking for student or staff information? Student Directory Staff Directory.

Courses Select Level Undergraduate Postgraduate. People Prof Michael Adams. Email adamm essex. Research and professional activities Research interests Optoelectronic physics and technology. Key words: Mutual injection. Key words: THz emitters. Teaching and supervision Previous supervision.

Sami Saeed M Alharthi. Matthew Richard Hall. Kevin Richard Schires. Nadir Ali Khan. Rihab Khalid Shakir Al Seyab. Publications Journal articles Adams, M. Show all. Book chapters 1 Alexandropoulos, D. Conferences Li, N. Injection locking of two laterally-coupled semiconductor laser arrays RIN of mode-locked quantum dot external cavity laser Hurtado, A.

Control of the emitted polarization in a nm spin-vcsel subject to circularly polarized optical injection Alharthi, SS. Mode-locked quantum-dot hybrid soliton pulse source Hurtado, A. Tunable microwave signal generation with an optically-injected nm quantum dot distributed-feedback laser Hurtado, A. Tunable microwave, millimeter-wave and THz signal generation with a nm quantum dot laser Hurtado, A.

Bistability and switching with very high contrast ratio in an optically-injected nm-QDash Fabry-Perot laser Schires, K. Polarized optical injection in long-wavelength vertical-cavity surface emitting lasers Hurtado, A. Dynamical transitions in a coupled integrated device Khan, N.

Analysis and characterisation of experimental real-time series of a semiconductor laser under optical injection Quirce, A. Spatio-temporal dynamics of a multi-section tunable laser with and without optical injection Labukhin, D.

Nonlinear spatio-temporal dynamics of optically-injected three-section tunable DBR lasers Hurtado, A. All-optical inverter with a vertical-cavity semiconductor optical amplifier Quirce, A. Dynamics of optically-injected distributed feedback lasers using the travelling-wave approach Quirce, A. Locking bandwidth of optically injected Fabry—Perot semiconductor lasers for high injection strengths Homayounfar, A.

Modelling of real space transfer optical emitters Loudon, R. Spontaneous emission in microcavities Hurtado, A. Gain compression and recovery in semiconductor optical amplifiers Homayounfar, A.

Investigation of photodetector structures for THz emission by photomixing using numerical simulation Adams, MJ. Looking back and seeing the future: 35 years of optoelectronics Dyson, A. Photomixer for portable THz applications Hurtado, A. The lab has an international reputation for work on hot electrons and instabilities in semiconductors. Recently, an off-shoot of the HELLISH work has led to novel devices, combining wavelength conversion with optical amplification, achieved with a wide range of tunability.

The laboratory's activities also include work on transport and optoelectronic properties of GaN and related compounds, such as the study of hot electron energy and momentum relaxation, the effects of spontaneous polarisation; the phenomenon of squeezed electrons, Bloch oscillations, spin transport and the possibility of a nitride-based cascade laser. There are places available for MSc and PhD studies in the research group for students with backgrounds in physics, electronics or optoelectronic engineering and applied mathematics.

If you are interested in working in the research group, in any of the research fields listed above, please contact Dr Nick Zakhleniuk naz essex. Colleagues from both UK and overseas that wish to join the group for a short-period, as visiting, or research fellows are also welcome to apply. Courses Life Visit us Research. The processes giving rise to the lifetimes of the magnetic excitations in the first order of the perturbation classification correspond to the decay of a magnon into an electron-hole pair with a spin-flip.

Some numerical estimates of various effect are given, taking parameters appropriate to EuO. This site uses cookies. By continuing to use this site you agree to our use of cookies. To find out more, see our Privacy and Cookies policy. Close this notification.