Sexithiophene mobility

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Table shows that Sexithiophene and its dihexyl derivative have the highest mobility. X-ray measurements of these polymers Show that they are highly. We investigated the electronic states of α-sexithiophene (α-6T) on by means of this surface has been selected because the substantial mobility of molecules. Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/​acceptor (C60) interface and mobility improvement. Byoungnam Park.

Although DH-6T has higher hole mobility than DSi-6T, the DSi-6T The silyl end​-capped sexithiophene (DSi-6T, g/L in CHCl3) was more. Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the Density of Traps. Gilles Horowitz1, Riadh Hajlaoui1 and Philippe. Temperature Dependence of the Field-Effect. Mobility of Sexithiophene. Determination of the Density of Traps. Journal de Physique III, EDP.

Temperature Dependence of the Field-Effect. Mobility of Sexithiophene. Determination of the Density of Traps. Journal de Physique III, EDP. We investigated the electronic states of α-sexithiophene (α-6T) on by means of this surface has been selected because the substantial mobility of molecules. Table shows that Sexithiophene and its dihexyl derivative have the highest mobility. X-ray measurements of these polymers Show that they are highly.






Abstract Conductivity and field-effect mobility measurements as a function of temperature have been carried out on unsubstituted sexithiophwne 6T and end-substituted dihexyl- sexithiophene DH6T. Importantly, the field-effect mobility tends to saturate at both high gate voltages and high mobility.

The data were analyzed within the frame of a multiple thermal trapping and release model. The mobility of localized states mobility the transport level has been determined for both compounds, and was sexithiophene to a sexithiophene exponential distribution, which can be compared to that of hydrogenated sexithiophene silicon sexithiophene.

The localized trap states in 6T and DH6T originate from grain boundaries. The lower mobility of mibility sexithiophene compound can be attributed to the sexithiophene higher density of traps. Radium Paris J. Radium J. Colloques J. Paris J. Physique Lett. I France J. II France J. III France J. IV France Current journals. III France. DOI: Article suivant. Articles similaires An analytical model for the organic field-effect transistor in the depletion mode.

Application to sexithiophene films and mobility crystals Eur. AP 1, Partagez Mendeley. Pour mobility lecteurs Alerte courriel.

III France J. IV France Current journals. III France. DOI: Article suivant. Articles similaires An analytical model for the organic field-effect transistor in the depletion mode. Application to sexithiophene films and single crystals Eur. Please wait while we load your content Something went wrong.

Try again? Cited by. Back to tab navigation Download options Please wait Article type: Paper. DOI: Download Citation: Phys. Ohno, H. Tanaka, K. Takahashi and M. Tanaka, Phys. Search articles by author Shinya Ohno. Hiroya Tanaka. Kazuma Tanaka. Kazutoshi Takahashi. Masatoshi Tanaka. Back to tab navigation Fetching data from CrossRef. All parameters are computed by quantum chemical approaches, and the mobility is obtained by kinetic Monte-Carlo simulation.

We evaluate the intra-layer mobility of sexithiophene crystal structures in high- and low-temperature phases for a wide range of temperatures. In the case of strong coupling, the quantum charge transfer rates were found to be significantly smaller than those calculated using the weak electronic coupling approximation, which leads to reduced mobility especially at low temperatures.